Poly-SiC Characterization and Properties for SmartSiC™

Hugo Biard; Alexis Drouin; Walter Schwarzenbach; Kassem Alassaad; Laetitia Coeurdray; Valentine Chagneux; Mael Coche; Sebastien Ledrappier; Sylvain Monnoye; Hugues Mank; Séverin Rouchier; Thierry Barge; Damien Radisson; Alexandre Moulin; Sophie Barbet; Julie Widiez; Sidoine Odoul; Christophe Maleville

doi:10.4028/p-qdRkZ7

Paper Titles

Preface

SmartSiC™ Substrates: A Boon to Drain Metallization Process
p.1

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
p.7

HYPREZ Wafering Solutions: A Novel Approach of SiC Wafering Solution
p.13

Poly-SiC Characterization and Properties for SmartSiC™
p.21

Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization
p.27

A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
p.35

High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
p.43

Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF₆ Plasma with Metal Masks
p.51

HomeMaterials Science ForumMaterials Science Forum Vol. 1124Poly-SiC Characterization and Properties for...

Poly-SiC Characterization and Properties for SmartSiC™

Abstract:

SmartSiC™ products developed by Soitec in the past four years consist of a high quality monocrystalline silicon carbide (m-SiC) on the top of an ultra-low resistivity polycrystalline silicon carbide (p-SiC or poly-SiC), the interface being electrically conductive. These engineered substrates are intended to bring added value for vertical power devices compared to standard m-SiC, by leveraging the wide bandgap (WBG) properties of the m-SiC and the enhanced p-SiC properties of the base substrate. Thus, it is of paramount importance to understand and monitor the p-SiC properties. In this paper, we present its electrical resistivity, microstructure and texture measurements through SEM and EBSD, thermal conductivity through Laser Flash Anneal (LFA), and Young modulus measurements.

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Periodical:

Materials Science Forum (Volume 1124)

Pages:

21-25

DOI:

https://doi.org/10.4028/p-qdRkZ7

Citation:

Cite this paper

Online since:

August 2024

Authors:

Hugo Biard*, Alexis Drouin, Walter Schwarzenbach, Kassem Alassaad, Laetitia Coeurdray, Valentine Chagneux, Mael Coche, Sebastien Ledrappier, Sylvain Monnoye, Hugues Mank, Séverin Rouchier, Thierry Barge, Damien Radisson, Alexandre Moulin, Sophie Barbet, Julie Widiez, Sidoine Odoul, Christophe Maleville

Keywords:

Low Resistivity, Polycrystalline Silicon Carbide, SmartSiC™, Thermal Conductivity, Young Modulus

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Creative Commons CC BY 4.0

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* - Corresponding Author

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