Preface
Filling-Design Effect of Powder Source in the Crucible on SiC Single-Crystal Growth
p.1
p.1
Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
p.9
p.9
Epitaxial SiC Development for High Nitrogen Incorporation
p.17
p.17
The 4H-SiC Epitaxy Study of Ammonia Doping
p.23
p.23
Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
p.33
p.33
Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks
p.43
p.43
Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
p.49
p.49
Active Planarization Method from Rough Surface of 4º-off 4H-SiC (0001) Controlled by Step Bunching and Debunching Mechanism Using Dynamic AGE-ing®
p.57
p.57
Preface
Abstract:
You have full access to the following eBook
