Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy

Hiroyuki Nagasawa; Maho Abe; Takenori Tanno; Michimasa Musya; Masao Sakuraba; Shigeo Sato; Yukimune Watanabe; Maki Suemitsu

doi:10.4028/p-BJgP7H

Paper Titles

Filling-Design Effect of Powder Source in the Crucible on SiC Single-Crystal Growth
p.1

Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
p.9

Epitaxial SiC Development for High Nitrogen Incorporation
p.17

The 4H-SiC Epitaxy Study of Ammonia Doping
p.23

Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
p.33

Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks
p.43

Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
p.49

Active Planarization Method from Rough Surface of 4º-off 4H-SiC (0001) Controlled by Step Bunching and Debunching Mechanism Using Dynamic AGE-ing^®
p.57

The Application of Dynamical Thermal Annealing Processes after Mechanical Slicing as an Integrated Contactless SiC Wafering Method to Control Crystal Defects
p.63

HomeMaterials Science ForumMaterials Science Forum Vol. 1157Formation of Alternating Epilayers of 4H-SiC and...

Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy

Abstract:

To generate both two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) at will in SiC polytype heterojunctions, simultaneous lateral epitaxy (SLE) method has been extended to form epilayers of alternating stacks of 4H-and 3C-SiC, which includes the first formation of single-domain 4H-SiC on 3C-SiC. The process starts with a spontaneous generation of mononuclear 3C-SiC on the atomically flat wide terrace on 4H-SiC, which expands parallel to the basal plane to form a single-domain 3C-SiC layer having the coherent interface with the underlying 4H-SiC layer. Step-controlled epitaxy is then applied using the adjacent 4H-SiC steps to grow an alternative 4H-SiC layer on top of the 3C-SiC surface, forming another coherent interface. The crystal structure, the interface structure, and the carrier distribution of this stacked epilayers was analyzed. Finally, it is demonstrated that 2DEG occurs at the coherent interface between the 3C-SiC Si-and 4H-SiC C-faces and 2DHG at the 3C-SiC C-and 4H-SiC Si-faces.

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