Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters

Abstract:

This study investigates the multifaceted relationships between key process parameters such as C/Si ratio, system pressure, temperature, and growth rate and their effects on nitrogen dopant incorporation in homoepitaxial layers on 4H-SiC substrates. We focus on understanding how these growth parameters influence the in situ nitrogen incorporation during chemical vapor deposition (CVD) of epitaxial layers on 150 mm commercially available SiC substrates. Through a carefully designed experimental framework, which explores the interactions between each parameter and the C/Si ratio, we have shed light on a refined approach for epitaxial growth. This approach may not only stabilize the nitrogen dopant concentration across the wafer but possibly also reduces the formation of epitaxial defects.

• Periodical: Materials Science Forum (Volume 1157)
• Pages: 9-16
• DOI: https://doi.org/10.4028/p-1uGwT1
• Online since: September 2025
• Authors: Alexander Schrader, Nils Steller, Dennis Reimann, Firas Faisal*
• Keywords: C/Si Ratio, CVD, Dopant Incorporation, Epitaxy, Growth Parameters, Nitrogen Doping, On-Wafer Uniformity, Site Competition

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