Epitaxial SiC Development for High Nitrogen Incorporation

Brenda L. VanMil; Charity H. Burgess; Haoran Wen; Farrokh Ayazi

doi:10.4028/p-6BykPL

Paper Titles

Preface

Filling-Design Effect of Powder Source in the Crucible on SiC Single-Crystal Growth
p.1

Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
p.9

Epitaxial SiC Development for High Nitrogen Incorporation
p.17

The 4H-SiC Epitaxy Study of Ammonia Doping
p.23

Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
p.33

Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks
p.43

Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
p.49

Active Planarization Method from Rough Surface of 4º-off 4H-SiC (0001) Controlled by Step Bunching and Debunching Mechanism Using Dynamic AGE-ing^®
p.57

HomeMaterials Science ForumMaterials Science Forum Vol. 1157Epitaxial SiC Development for High Nitrogen...

Epitaxial SiC Development for High Nitrogen Incorporation

Abstract:

SiCOI is used as a lower cost substrate for power electronics and enables fabrication of MEMS and photonics platforms. Modification of the mechanical properties of SiC through doping is a potential pathway for improving resonator performance. This effort aimed to develop growth parameters for growth of 4H-SiC with nitrogen concentrations of 2x10²⁰ cm^-3 with a smooth surface morphology for fabrication of SiCOI wafers for MEMS fabrication. Growth conditions that were investigated include substrate polarity, growth pressure, C/Si ratio, temperature, and carrier gas flow. Highly doped grown epiwafers contained particle defects which exhibited different morphologies for C- and Si-polarities.

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Periodical:

Materials Science Forum (Volume 1157)

Pages:

17-22

DOI:

https://doi.org/10.4028/p-6BykPL

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Online since:

September 2025

Authors:

Brenda L. VanMil*, Charity H. Burgess, Haoran Wen, Farrokh Ayazi

Keywords:

High Nitrogen Doping, Silicon Carbide on Insulator (SiCOI), Young's Modulus

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* - Corresponding Author

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