Piezo-Magneto-Resistivity of Si-B in the Hopping Regime
p.171
p.171
Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon
p.177
p.177
Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals
p.183
p.183
Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method
p.189
p.189
The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism
p.195
p.195
Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption
p.201
p.201
Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping
p.207
p.207
Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500°C in Czochralski-Grown Si
p.213
p.213
Ultrashallow Hydrogen-Like Thermal Donors in Silicon Crystals
p.219
p.219
The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism
Abstract:
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Periodical:
Materials Science Forum (Volumes 117-118)
Pages:
195-200
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Online since:
January 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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