Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

207-212

Citation:

H. Yamada-Kaneta et al., "Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping ", Materials Science Forum, Vols. 117-118, pp. 207-212, 1993

Online since:

January 1993

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