Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method
p.189
p.189
The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism
p.195
p.195
Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption
p.201
p.201
Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping
p.207
p.207
Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500°C in Czochralski-Grown Si
p.213
p.213
Ultrashallow Hydrogen-Like Thermal Donors in Silicon Crystals
p.219
p.219
Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals
p.225
p.225
Simulation of Oxygen Precipitation and Denuded Zone Formation during Thermal Anneals
p.231
p.231
Characterization of Excimer Laser Annealing of Arsenic Implanted Silicon
p.237
p.237
Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500°C in Czochralski-Grown Si
Abstract:
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Periodical:
Materials Science Forum (Volumes 117-118)
Pages:
213-218
Citation:
Online since:
January 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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