Paper Titles

Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
p.495

Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons
p.501

Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si
p.507

Visible Photoluminescence of Porous Silicon
p.513

Photoluminescence due to Zn-O Complexes in Silicon
p.519

High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor
p.521

Morphology of Oxide Precipitates in Czochralski Silicon Crystals
p.523

Site Change of Li Atoms in ZnSe by Photoirradiation
p.525

Characterization of Impurities in Si(C₂H₅O)₄ for Efficient SiO₂ Production in ULSI Technology
p.527

HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Site Change of Li Atoms in ZnSe by...

Site Change of Li Atoms in ZnSe by Photoirradiation

Article Preview

Abstract:

You might also be interested in these eBooks

Shallow Impurities in Semiconductors V

Info:

Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

525-526

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.525

Citation:

Cite this paper

Online since:

January 1993

Authors:

M. Ichimura, T. Wada, S. Fujita

Keywords:

Photoirradiation, ZnSe

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: