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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Characterization of Impurities in Si(C2H5O)4 for...

Characterization of Impurities in Si(C₂H₅O)₄ for Efficient SiO₂ Production in ULSI Technology

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

527-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.527

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Online since:

January 1993

Authors:

T. Danno, K. Seki

Keywords:

SiO₂, TEOS

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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