Preface
Proton Implantation–Induced Reduction of SSF Width and Associated Adverse Effects in 4H-SiC Epitaxial Layers
p.1
p.1
Investigation on Bipolar Degradation Caused by In-Grown Stacking Fault in 3.3kV SiC-MOSFET
p.11
p.11
Process-Dependent Photoluminescence Behavior Evolution of Stacking Faults in 4H-SiC
p.19
p.19
Trial Implementation of Operando PL Spectrum Mapping Using a Mini-Spectrometer in EVC Screening of 4H-SiC Wafers
p.27
p.27
Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC
p.37
p.37
Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
p.43
p.43
Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
p.49
p.49
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
p.55
p.55
Preface
Abstract:
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