Paper Titles

Investigation on Bipolar Degradation Caused by In-Grown Stacking Fault in 3.3kV SiC-MOSFET
p.11

Process-Dependent Photoluminescence Behavior Evolution of Stacking Faults in 4H-SiC
p.19

Trial Implementation of Operando PL Spectrum Mapping Using a Mini-Spectrometer in EVC Screening of 4H-SiC Wafers
p.27

Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC
p.37

Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
p.43

Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
p.49

Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
p.55

Micropipes in SiC Die Observed by Molten KOH Etching
p.63

Synchrotron X-Ray Topography Analysis of Low Angle Grain Boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals
p.69

HomeMaterials Science ForumMaterials Science Forum Vol. 1190Challenges in 1SSF Detection in 4H-SiC Epilayer...

Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure

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Abstract:

Basal plane dislocations (BPDs) represent one of the most detrimental defects in 4H-SiC epitaxial wafers, causing forward voltage degradation in bipolar and power FET devices through the formation and expansion of Shockley-type stacking faults (SSFs). This expansion is driven by the recombination-enhanced dislocation glide (REDG) mechanism during forward bias operation. Despite efforts to mitigate BPD effects by converting them into threading edge dislocations (TEDs) via buffer layer engineering, throughout the epitaxial growth SSFs can still nucleate and propagate, particularly under high current injection. This work presents a comprehensive analysis combining electrical characterization, fault localization technique, Scanning Electron Microscopy (SEM) and micro-photoluminescence (μ-PL) to investigate SSF formation, crystallographic features, and their impact on device performance. The results underscore the critical role of advanced diagnostics and epitaxial process optimization in controlling SSF-related degradation and improving the reliability of SiC power devices.

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Stacking Faults

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Periodical:

Materials Science Forum (Volume 1190)

Pages:

43-48

DOI:

https://doi.org/10.4028/p-1DCRuh

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Online since:

May 2026

Authors:

Cristiano Calabretta*, Cettina Bottari, Salvatore Adamo, Beatrice Carbone, Giovanni Maira, Fabiana Vento, Enzo Fontana, Nicolo Piluso, Mario S. Alessandrino, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte, Andrea Severino

Keywords:

1SSF, Basal Plane Dislocation (BPD), Burger Vector, ELFR, IDSS, Micro Photoluminescence

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[1] Feng, Gan, Jun Suda, and Tsunenobu Kimoto. Physica B: Condensed Matter 404, no. 23-24 :4745-4748, (2009).

DOI: 10.1016/j.physb.2009.08.189

[2] Thierry-Jebali, N., C. Kawahara, T. Miyazawa, H. Tsuchida, and T. Kimoto. AIP Advances 5, no. 3 (2015).

[3] Palanisamy, Shanmuganathan, et al. 2021 IEEE International Reliability Physics Symposium (IRPS). IEEE, (2021).

[4] J Wang, Pin, et al. Materials Science in Semiconductor Processing 177 ,108369, (2024).

[5] Piluso, Nicolo, et al. "High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process." Materials Science Forum. Vol. 963. Trans Tech Publications Ltd, 2019.

DOI: 10.4028/www.scientific.net/msf.963.91

[6] A. Agarwal, H. Fatima, S. Haney, and S. H. Ryu, IEEE Electron Device Lett. 28, 587 (2007).

[7] Piluso, Nicolo, et al. "4H-SiC defects analysis by Micro Raman spectroscopy." Materials Science Forum. Vol. 821. Trans Tech Publications Ltd, 2015.

DOI: 10.4028/www.scientific.net/msf.821-823.335

[8] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.Å. Nilsson, J.P. Bergman, and P. Skytt, Long term operation of 4.5 kV PiN and 2.5 kV JBS diodes, Mater. Sci. Forum 353- 356 (2001), pp.727-730.

DOI: 10.4028/www.scientific.net/msf.353-356.727

[9] H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J.P. Bergman, A. Ellison, T. Tuomi, and E. Janzén, Dislocation evolution in 4H-SiC epitaxial layers, J. Appl. Phys. 91 (2002), pp.6354-6360.

DOI: 10.1063/1.1468891

[10] H. Jacobson, J.P. Bergman, C. Hallin, E. Janzén, T. Tuomi, and H. Lendenmann, Properties and origins of different stacking faults that cause degradation in SiC PiN diodes, J. Appl. Phys. 95 (2004), pp.1485-1488.

DOI: 10.1063/1.1635996

[11] S. Ha, M. Benamara, and M. Skowronski, Core structure and properties of partial dislocations in silicon carbide p-i-n diodes, Appl. Phys. Lett. 83 (2003), pp.4957-4959.

DOI: 10.1063/1.1633969

[12] S. Ha, M. Skowronski, and H. Lendenmann, Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes, J. Appl. Phys. 96 (2004), pp.393-398.

DOI: 10.1063/1.1756218

[13] Calabretta, Cristiano, et al. "Impact of nitrogen on the selective closure of stacking faults in 3CSiC." Crystal Growth & Design 22.8 (2022): 4996-5003.

DOI: 10.1021/acs.cgd.2c00515

[14] Calabretta, Cristiano, et al. "Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H-SiC epitaxial layers." Materials Science in Semiconductor Processing 174 (2024): 108175.

DOI: 10.1016/j.mssp.2024.108175

[15] Stahlbush, M.E. Twigg, J.J. Sumakeris, K.G. Irvine, and P.A. Losee, Mechanisms of stacking fault growth in SiC PiN diodes, Mater. Res. Soc. Symp. Proc. 815 (2004), p.103.

DOI: 10.1557/proc-815-j6.4

[16] Iijima, Akifumi, et al. Philosophical Magazine 97.30: (2017), 2736-2752.

[17] Kimoto, Tsunenobu, and James A. Cooper. Fundamentals of silicon carbide technology: growth, characterization, devices and applications. John Wiley & Sons, 2014.

DOI: 10.1002/9781118313534

[18] Matsuhata, Hirofumi, et al. "Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg-Barrett X-ray topography." Philosophical Magazine 94.15 (2014): 1674-1685.

DOI: 10.1080/14786435.2014.894646