Paper Titles
Trial Implementation of Operando PL Spectrum Mapping Using a Mini-Spectrometer in EVC Screening of 4H-SiC Wafers
p.27
Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC
p.37
Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
p.43
Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
p.49
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
p.55
Micropipes in SiC Die Observed by Molten KOH Etching
p.63
Synchrotron X-Ray Topography Analysis of Low Angle Grain Boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals
p.69
Polytype Transitions in Silicon Carbide: A Macroscopic View
p.79
Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
p.89

Micropipes in SiC Die Observed by Molten KOH Etching

Article Preview
View Pdf By email

Abstract:

The growing demand for wide-bandgap (WBG) materials in the microelectronics industry has led to increased investment in medium- and high-voltage power products based on SiC technology. SiC offers an excellent balance between high voltage blocking capability, high temperature operation and high switching frequencies [1]. One key step in preparing high-performance devices is improving the growth process of SiC ingot material by Physical Vapor Transport (PVT). Epitaxial growth occurs through the chemical vapor deposition (CVD) method [2]. However, this method is reported to generate extended defects such as Complex Stacking Faults (formerly referred to as carrots) and Polytype Inclusions (formerly referred to as triangles or comets) and propagate defects pre-existing in the bulk material, such as micropipes (MPs) and threading screw dislocations (TSDs), which have a very high killer ratio in SiC devices [3, 4]. In this work, the KOH molten etching method was used to investigate the nature of the defects that caused device failures; Raman spectroscopy was also employed to identify the spectroscopic correspondence of the peaks of interest.

You have full access to the following eBook
Stacking Faults Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1190)

Pages:

63-67

DOI:

https://doi.org/10.4028/p-3WKk3V

Citation:

Cite this paper

Online since:

May 2026

Authors:

Fabiana Vento*, Nicolò Piluso, Cristiano Calabretta, Chiara Nania, Domenica Raciti, Ruggero Anzalone, Andrea Severino

Keywords:

Defects, KOH Etching, Micropipe, SiC Die, Wide-Bandgap Materials

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

References

[1] Shenai, Krishna, Michael Dudley, and Robert F. Davis. "Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices." ECS Journal of Solid-State Science and Technology 2.8 (2013): N3055.

DOI: 10.1149/2.012308jss

Google Scholar

[2] Gutkin, Mikhail Yu, et al. "Micropipe evolution in silicon carbide." Applied physics letters 83.11 (2003): 2157-2159.

Google Scholar

[3] N. Piluso, et al. "Influence of Starting Material on Final Device in SiC Power Technologies." 2025 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2025.

DOI: 10.1109/irps48204.2025.10983900

Google Scholar

[4] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology, Ieee, Wiley, (2014).

Google Scholar

[5] Wang, Yalin, Yi Ding, and Yi Yin. "Reliability of wide band gap power electronic semiconductor and packaging: A review." Energies 15.18 (2022): 6670.

DOI: 10.3390/en15186670

Google Scholar

[6] Suthar, Anvi N., J. Venkataramanaiah, and Y. Suresh. "Conventional, wide-bandgap, and hybrid power converters: A comprehensive review." Renewable and Sustainable Energy Reviews 213 (2025): 115419.

DOI: 10.1016/j.rser.2025.115419

Google Scholar

[7] Codreanu, C., et al. "Comparison of 3C–SiC, 6H–SiC and 4H–SiC mesfets performances." Materials Science in Semiconductor Processing 3.1-2 (2000): 137-142.

DOI: 10.1016/s1369-8001(00)00022-6

Google Scholar

[8] Ohtani, Noboru, et al., Journal of crystal growth 286.1 (2006): 55-60.

Google Scholar

[9] Wang, Rong, et al. "Impurities and defects in 4H silicon carbide." Applied Physics Letters 122.18 (2023).

Google Scholar

[10] Wang, Hejing, et al. "Micropipes in SiC single crystal observed by molten KOH etching." Materials 14.19 (2021): 5890.

DOI: 10.3390/ma14195890

Google Scholar

[11] P. Fiorenza, et. al., Materials Science in Semiconductor Processing 194, 109575 (2024).

Google Scholar

[12] Lei Xu, et. Al., Materials Science in Semiconductor Processing, Volume 195, (2025).

Google Scholar

[13] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology, Ieee, Wiley, (2014).

Google Scholar