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Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
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Polytype Transitions in Silicon Carbide: A Macroscopic View
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Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
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Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range

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Abstract:

This work explores the role of implantation depth in suppressing bipolar degradation of 4H-SiC PiN diodes through proton implantation. Targeting depths aligned with active basal plane dislocations (BPDs) effectively reduces stacking-fault expansion, as confirmed by electroluminescence imaging [1,2]. From these observations, we quantified the effective range of suppression in both depth and safe operating current density. Room-temperature proton implantation (170keV, 1×1016 cm-2) into the buffer reduced forward-voltage drift ΔVF by 97% at 600A/cm2. The implanted diode extended the safe operating current range to 1300A/cm2, ~200A/cm2 higher than the reference, confirming effective suppression of bipolar degradation. Once the suppression barrier, defined as a critical excess hole density threshold, was exceeded, the proton-implanted diode exhibited explosive basal plane dislocation activity, leading to the formation of multiple bar-shaped stacking faults. These active BPDs are located deeper than the proton-implant tail, at a depth of around 11.4µm; however, the threshold hole density required for their activation remains approximately the same (~ 4×1016 cm-3) [3].

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Periodical:

Materials Science Forum (Volume 1190)

Pages:

89-94

DOI:

https://doi.org/10.4028/p-QUWd3K

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Online since:

May 2026

Authors:

Atsushi Shimbori*, Ryota Wada, Nobuhiro Tokoro, Takashi Kuroi, Hiu Yung Wong, Alex Q. Huang

Keywords:

Basal Plane Dislocation (BPD), Bipolar Degradation, Electroluminescence, Forward Voltage Drop, Minority Carrier Lifetime, Proton Implantation, SiC PiN Diode, Stacking Fault, TCAD

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* - Corresponding Author

References

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