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HomeMaterials Science ForumMaterials Science Forum Vol. 1190Exploring the Ion Implantation Mechanism for...

Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach

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Abstract:

Suppressing the expansion of Single Shockley-type stacking faults (1SSFs) is critical for the growing demand of high-performance power devices. However, the underlying suppression mechanism has not yet been fully elucidated. Through proton ion implantation studies, we have established a fundamental approach by modeling this phenomenon. Carbon vacancy (V_c) generated by high-energy proton implantation are found to play a significant role in suppressing the expansion of 1SSFs.

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Stacking Faults

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Periodical:

Materials Science Forum (Volume 1190)

Pages:

49-54

DOI:

https://doi.org/10.4028/p-kNQ0l1

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Online since:

May 2026

Authors:

Takashi Yoda*, Masaki Sano, Jun Kojima, Shoichi Onda, Anton Myalitsin, Kuniyuki Kakushima, Takayuki Ohba, Atsushi Oshiyama, Kenji Shiraishi

Keywords:

Basal Plane Dislocation (BPD), Carbon Vacancies (V_c), Cathodoluminescence (CL), Density Functional Theory (DFT), Photoluminescence (PL), Power Devices, Proton Implantation, Silicon Carbide (SiC), Single Shockley-Type Stacking Faults (1SSFs)

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