Paper Titles
Proton Implantation–Induced Reduction of SSF Width and Associated Adverse Effects in 4H-SiC Epitaxial Layers
p.1
Investigation on Bipolar Degradation Caused by In-Grown Stacking Fault in 3.3kV SiC-MOSFET
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Process-Dependent Photoluminescence Behavior Evolution of Stacking Faults in 4H-SiC
p.19
Trial Implementation of Operando PL Spectrum Mapping Using a Mini-Spectrometer in EVC Screening of 4H-SiC Wafers
p.27
Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC
p.37
Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
p.43
Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
p.49
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
p.55
Micropipes in SiC Die Observed by Molten KOH Etching
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Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC

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Abstract:

Ultraviolet (UV) irradiation on 4H-SiC epitaxial wafers, conducted prior to metalized circuit formation, is widely used to reveal whether BPD (basal plane dislocation) induced nucleation and expansion of a single Shockley stacking fault (1SSF) occurs or not via recombination enhanced dislocation glide (REDG). However, the UV method has remained largely qualitative, and its quantitative relationship to forward bias current injection has not been established. Here, using the excess minority carrier density at the BPD-to-TED (threading edge dislocation) conversion point, we establish equivalence criteria between two stress modes (current density and UV irradiance) and introduce a previously overlooked requirement for pulsed UV laser sources: the minority carrier density must exceed a threshold and be sustained for a finite “critical duration,” tcrit. Notably, tcrit shows only weak dependence on the bulk carrier lifetime (τb), offering a practical route to determine pulsed UV irradiation conditions that faithfully emulate forward bias stress, even when τb is unknown.

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Periodical:

Materials Science Forum (Volume 1190)

Pages:

37-42

DOI:

https://doi.org/10.4028/p-0xM8R1

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Online since:

May 2026

Authors:

Yasuyuki Igarashi*, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Bipolar Degradation, Minority-Carrier Lifetime, Recombination-Enhanced Dislocation Glide, Stacking Fault, UV Screening

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* - Corresponding Author

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