Paper Titles
Preface
Proton Implantation–Induced Reduction of SSF Width and Associated Adverse Effects in 4H-SiC Epitaxial Layers
p.1
Investigation on Bipolar Degradation Caused by In-Grown Stacking Fault in 3.3kV SiC-MOSFET
p.11
Process-Dependent Photoluminescence Behavior Evolution of Stacking Faults in 4H-SiC
p.19
Trial Implementation of Operando PL Spectrum Mapping Using a Mini-Spectrometer in EVC Screening of 4H-SiC Wafers
p.27
Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC
p.37
Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
p.43
Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
p.49
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
p.55

Investigation on Bipolar Degradation Caused by In-Grown Stacking Fault in 3.3kV SiC-MOSFET

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Abstract:

This study investigates the role of in-grown stacking faults (SF) in the bipolar degradation of 3.3 kV SiC-MOSFETs, emphasizing their significant contribution to both on-resistance (VDSon) and leakage current (IDSX) degradation. A high current stress was applied to over 1,500 chips, resulting in 72 degraded devices, with 45 exhibiting notable IDSX degradation. A detailed analysis revealed that most IDSX degraded chips contained bar-shaped in-grown SFs, suggesting a correlation between these defects and leakage current degradation. These findings indicate that peculiar basal plane dislocations associated with in-grown SFs may be critical contributors to IDSX degradation, indicating the need for further research to elucidate the mechanisms behind this degradation in SiC-MOSFETs.

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Periodical:

Materials Science Forum (Volume 1190)

Pages:

11-17

DOI:

https://doi.org/10.4028/p-yp6sOF

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Online since:

May 2026

Authors:

Hiroki Niwa*, Takanori Tanaka, Kazuya Tojima, Hiroyuki Amishiro, Yasuhiro Kagawa, Katsutoshi Sugawara, Tatsuro Watahiki

Keywords:

Basal Plane Dislocation (BPD), Bipolar Degradation, Body Diode, Failure Analysis, In-Grown Stacking Fault, Leakage Current Degradation, PL Imaging

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* - Corresponding Author

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