Paper Titles

Impurity Self-Screening
p.1445

Defects and Recombination in Disordered Silicon
p.1451

Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon
p.1459

The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
p.1463

Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si
p.1469

Electrical Characterization of Surface Defects on Porous p-Type Silicon
p.1475

Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
p.1481

Defects in As-Prepared and Thermally Oxydized Porous Silicon
p.1487

Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon
p.1493

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Association of Non-Radiative ODMR with the...

Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1469-1474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1469

Citation:

Cite this paper

Online since:

October 1993

Authors:

Yasunori Mochizuki, Masashi Mizuta

Keywords:

ODMR, Photoluminescence (PL), Porous Si

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: