Paper Titles

Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon
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The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
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Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si
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Electrical Characterization of Surface Defects on Porous p-Type Silicon
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Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
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Defects in As-Prepared and Thermally Oxydized Porous Silicon
p.1487

Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon
p.1493

Luminescence Associated with Rod-Like Defects in Czochralski Silicon
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Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Luminescence due to Oxygen Induced Chemical...

Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1481-1486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1481

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Online since:

October 1993

Authors:

Peter Deák, G. Kostyál, M. Rosenbauer

Keywords:

Semi-Empirical Calculations, Siloxene, Visible Luminescence

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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