Paper Titles

Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
p.1481

Defects in As-Prepared and Thermally Oxydized Porous Silicon
p.1487

Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon
p.1493

Luminescence Associated with Rod-Like Defects in Czochralski Silicon
p.1499

Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation
p.1505

Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon
p.1511

Interaction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-Si
p.1517

Control of Size and Density of Stacking Fault in Silicon by Gold Diffusion
p.1523

On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon
p.1529

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Phase Transitions at the Amorphous/Crystalline...

Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1505-1510

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1505

Citation:

Cite this paper

Online since:

October 1993

Authors:

Michael Seibt, J. Imschweiler, H.A. Hefner

Keywords:

Interfacial Roughness, Ion-Implantation Damage, Silicon Self-Interstitial

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: