Paper Titles

Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation
p.1505

Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon
p.1511

Interaction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-Si
p.1517

Control of Size and Density of Stacking Fault in Silicon by Gold Diffusion
p.1523

On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon
p.1529

Implantation of Carbon in GaAs and Compensating Native Defects
p.1535

The Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional Structures
p.1541

Deep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well Laser
p.1547

Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147On the Influence of Transition Metal Impurities on...

On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1529-1534

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1529

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Online since:

October 1993

Authors:

Manfred Reiche

Keywords:

Metal Impurities, Precipitation, Process-Induced Defects

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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