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A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Kinetics of Oxygen Loss and Thermal Donor...

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

963-968

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.963

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Online since:

October 1993

Authors:

S.A. McQuaid, Charalamos A. Londos, M.J. Binns, R.C. Newman, J.H. Tucker

Keywords:

Hydrogen, Oxygen Diffusion, Silicon, Thermal Donor

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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