The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

963-968

DOI:

10.4028/www.scientific.net/MSF.143-147.963

Citation:

S.A. McQuaid et al., "The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C", Materials Science Forum, Vols. 143-147, pp. 963-968, 1994

Online since:

October 1993

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