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The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
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A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
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Hydrostatic Pressure Investigations of Metastable Defect States
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Vacancy in the EL2 and DX Centers Studied by Positron Annihilation
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Theoretical Calculations of Antisite and Antisite-Like Defects in GaP
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147A Piezo-Spectroscopic Study of Oxygen-Vacancy...

A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

969-974

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.969

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Online since:

October 1993

Authors:

B. Pajot, S.A. McQuaid, R.C. Newman, C. Song, R. Rahbi

Keywords:

Oxygen Vacancy, Piezo-Spectroscopy, Silicon

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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