Paper Titles

A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
p.969

Hydrostatic Pressure Investigations of Metastable Defect States
p.975

Vacancy in the EL2 and DX Centers Studied by Positron Annihilation
p.983

Theoretical Calculations of Antisite and Antisite-Like Defects in GaP
p.991

Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2
p.995

Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs
p.1001

Ordering of the EL2 Defects in the Metastable State
p.1007

Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
p.1013

Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
p.1019

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Pressure Dependences of Transition Energies of the...

Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

995-1000

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.995

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Online since:

October 1993

Authors:

Christine Ziegler, Udo Scherz, Matthias Scheffler

Keywords:

As Antisite, EL2, Green-Function Method, Hydrostatic Pressure, Metastability

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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