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Paper Titles
Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2
p.995
Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs
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Ordering of the EL2 Defects in the Metastable State
p.1007
Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
p.1013
Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
p.1019
Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As
p.1025
Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
p.1031
Ab-Initio Calculation of the Hyperfine Fields for Deep A1 Donors in GaAs under Pressure
p.1035
Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs
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Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1019-1024

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1019

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Online since:

October 1993

Authors:

M. Baj, L.H. Dmowski, T. Słupiński, Dariusz Wasik

Keywords:

DX Centers, Hydrostatic Pressure, Negative U

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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