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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Photoexcited and Metastable States of DX Centers...

Photoexcited and Metastable States of DX Centers in Si Doped Al_x Ga_1-x As

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1025-1030

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1025

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Online since:

October 1993

Authors:

Y.B. Jia, Hermann G. Grimmeiss

Keywords:

AlGaAs, DX Centers, Junction Space Charge Techniques, Metastable State

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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