Vacancy in the EL2 and DX Centers Studied by Positron Annihilation
p.983
p.983
Theoretical Calculations of Antisite and Antisite-Like Defects in GaP
p.991
p.991
Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2
p.995
p.995
Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs
p.1001
p.1001
Ordering of the EL2 Defects in the Metastable State
p.1007
p.1007
Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
p.1013
p.1013
Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
p.1019
p.1019
Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As
p.1025
p.1025
Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
p.1031
p.1031
Ordering of the EL2 Defects in the Metastable State
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
1007-1012
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Online since:
October 1993
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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