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Ordering of the EL2 Defects in the Metastable State
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Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
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Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
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Photoexcited and Metastable States of DX Centers in Si Doped Al_x Ga_1-x As
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Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
p.1031

Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure
p.1035

Magneto-Optical and ODEPR Investigations of Silicon Doped Al_xGa_1-xAs
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First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
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Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Deep Centers in Forward Based GaAs/AlGaAs Quantum...

Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1031-1034

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1031

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Online since:

October 1993

Authors:

Zhi Young Han, Y.B. Jia, Hermann G. Grimmeiss

Keywords:

AlGaAs, DX Centers, GaAs, Quantum Well, Superlattice

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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