For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As
p.1025
Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
p.1031
Ab-Initio Calculation of the Hyperfine Fields for Deep A1 Donors in GaAs under Pressure
p.1035
Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs
p.1041
First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
p.1047
Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
p.1051
The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAs
p.1057
Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
p.1063
Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
p.1069

First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices

Article Preview

Abstract:

You might also be interested in these eBooks
Defects in Semiconductors 17 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1047-1050

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1047

Citation:

Cite this paper

Online since:

October 1993

Authors:

S.L. Feng, J. Zhou, L.W. Lu

Keywords:

DLTS, Irradiation-Induced Defects, Metastability, Superlattice

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.