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Paper Titles
Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs
p.1041
First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
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Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
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The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAs
p.1057
Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
p.1063
Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
p.1069
Pressure Induced *-Shallow - Deep A1 Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs
p.1075
Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
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Kinetics of Electron Capture on DX Centers under High Pressure
p.1087

Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1063-1068

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1063

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Online since:

October 1993

Authors:

I.A. Buyanova, Sergei S. Ostapenko, A.U. Savchuk, Moissei K. Sheinkman

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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