Paper Titles

The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
p.1057

Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
p.1063

Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
p.1069

Pressure Induced *-Shallow - Deep A₁ Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs
p.1075

Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
p.1081

Kinetics of Electron Capture on DX Centers under High Pressure
p.1087

Static and Dynamic Absorption Measurements of the DX Center in Al_xGa_1-xAs
p.1093

Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
p.1099

Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
p.1105

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Properties of Resonant Localized Donor Level in...

Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1081-1086

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1081

Citation:

Cite this paper

Online since:

October 1993

Authors:

P. Dreszer, W.M. Chen, Dariusz Wasik, W. Walukiewicz, B.W. Liang, C.W. Tu, Eicke R. Weber

Keywords:

Antisite, Deep Defect, InP, Pressure, Scattering, Transport

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: