Paper Titles

Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
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Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
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Pressure Induced *-Shallow - Deep A₁ Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs
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Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
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Kinetics of Electron Capture on DX Centers under High Pressure
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Static and Dynamic Absorption Measurements of the DX Center in Al_xGa_1-xAs
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Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
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Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
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Hole Capture by the DX Center in AlGaAs Schottky Barriers
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Kinetics of Electron Capture on DX Centers under...

Kinetics of Electron Capture on DX Centers under High Pressure

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1087-1092

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1087

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Online since:

October 1993

Authors:

Igor E. Itskevich

Keywords:

AlGaAs, DX Centers, Persistent Photoconductivity

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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