Paper Titles

Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
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The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
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Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
p.1063

Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
p.1069

Pressure Induced *-Shallow - Deep A₁ Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs
p.1075

Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
p.1081

Kinetics of Electron Capture on DX Centers under High Pressure
p.1087

Static and Dynamic Absorption Measurements of the DX Center in Al_xGa_1-xAs
p.1093

Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Pressure Induced *-Shallow - Deep A1 Transition...

Pressure Induced *-Shallow - Deep A₁ Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1075-1080

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1075

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Online since:

October 1993

Authors:

J.E. Dmochowski, R.A. Stradling, D.J. Dunstan, A.D. Prins, A.R. Adams, K.E. Singer, T. Fujisawa, H. Kukimoto

Keywords:

Deep A₁ Impurity States, Donors, DX-Centers, High-Pressure, Photoluminescence (PL), Semiconductor

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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