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Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
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Kinetics of Electron Capture on DX Centers under High Pressure
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Static and Dynamic Absorption Measurements of the DX Center in Al_xGa_1-xAs
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Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
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Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
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Hole Capture by the DX Center in AlGaAs Schottky Barriers
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Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si
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Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Vacancy Related Metastable Defects in III-V...

Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1099-1104

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1099

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Online since:

October 1993

Authors:

Reinhard Krause-Rehberg, A. Polity, Th. Drost, G. Roos, Gerhard Pensl, D. Volm, B.K. Meyer

Keywords:

III-V Compounds, Metastable Defects, Positron Annihilation, Vacancy

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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