Paper Titles

Static and Dynamic Absorption Measurements of the DX Center in Al_xGa_1-xAs
p.1093

Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
p.1099

Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
p.1105

Hole Capture by the DX Center in AlGaAs Schottky Barriers
p.1111

Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si
p.1117

Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs
p.1123

Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al_0.35Ga_0.65As
p.1129

The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
p.1135

Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
p.1141

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Energy Shifts Due to the Local Environment of DX...

Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1117-1122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1117

Citation:

Cite this paper

Online since:

October 1993

Authors:

V. Mosser, Sylvie Contreras, P. Lorenzini, Jean-Louis Robert

Keywords:

Alloy Semiconductor, Deep Centers, DX Center, Electron Capture, III-V Compounds

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: