Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Mössbauer Spectroscopy
p.1105
p.1105
Hole Capture by the DX Center in AlGaAs Schottky Barriers
p.1111
p.1111
Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si
p.1117
p.1117
Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAs
p.1123
p.1123
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
p.1129
p.1129
The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
p.1135
p.1135
Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
p.1141
p.1141
On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si
p.1149
p.1149
Defect Interaction with the Double Donor 77Br in GaAs and InAs
p.1155
p.1155
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
1129-1134
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Online since:
October 1993
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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