Paper Titles

Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs
p.1123

Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al_0.35Ga_0.65As
p.1129

The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
p.1135

Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
p.1141

On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si
p.1149

Defect Interaction with the Double Donor ⁷⁷Br in GaAs and InAs
p.1155

Coexistence of the DX⁰ and DX^-State in Heavily Doped GaAs:Si ?
p.1161

The Metastable Si:(S + Cu) Defect
p.1167

The Structure of Au-Li and Pt-Li Complexes in Silicon
p.1173

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147On the Electron Capture Kinetics of DX Centers in...

On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1149-1154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1149

Citation:

Cite this paper

Online since:

October 1993

Authors:

G. Stöger, G. Brunthaler, G. Ostermayer, W. Jantsch, Zbysław Wilamowski, K. Köhler

Keywords:

Capture Kinetics, DX Center, Potential Fluctuations

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: