Paper Titles

Hole Capture by the DX Center in AlGaAs Schottky Barriers
p.1111

Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si
p.1117

Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs
p.1123

Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al_0.35Ga_0.65As
p.1129

The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
p.1135

Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
p.1141

On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si
p.1149

Defect Interaction with the Double Donor ⁷⁷Br in GaAs and InAs
p.1155

Coexistence of the DX⁰ and DX^-State in Heavily Doped GaAs:Si ?
p.1161

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The DX-Centers Related Mobility in AlGaAs: Charge...

The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects

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Abstract:

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1135-1140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1135

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Online since:

October 1993

Authors:

R. Piotrzkowski, E. Litwin-Staszewska, Jean-Louis Robert

Keywords:

Alloy Splitting, Charge Correlation, DX Centers, Electron Mobility

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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