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Paper Titles
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
p.1129
The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
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Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
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On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si
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Defect Interaction with the Double Donor 77Br in GaAs and InAs
p.1155
Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?
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The Metastable Si:(S + Cu) Defect
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The Structure of Au-Li and Pt-Li Complexes in Silicon
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The Configurational Change of a Metastable S-Cu Defect in Silicon
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Defect Interaction with the Double Donor 77Br in GaAs and InAs

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1155-1160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1155

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Online since:

October 1993

Authors:

E. Lohmann, Th. Schaefer, M. Wehner, R. Vianden

Keywords:

Br-Double Donor, Defect Metastability, EL2, GaAs, InAs, PAC

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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