Paper Titles

The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
p.1135

Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
p.1141

On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si
p.1149

Defect Interaction with the Double Donor ⁷⁷Br in GaAs and InAs
p.1155

Coexistence of the DX⁰ and DX^-State in Heavily Doped GaAs:Si ?
p.1161

The Metastable Si:(S + Cu) Defect
p.1167

The Structure of Au-Li and Pt-Li Complexes in Silicon
p.1173

The Configurational Change of a Metastable S-Cu Defect in Silicon
p.1179

A New Bistable Shallow Thermal Donor in Al-Doped Si
p.1185

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Coexistence of the DX0 and DX-State in Heavily...

Coexistence of the DX⁰ and DX^-State in Heavily Doped GaAs:Si ?

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1161-1166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1161

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Online since:

October 1993

Authors:

B. Goutiers, L. Dmowski, U. Willke, J.J. Harris, M. Rabary, Jean Claude Portal

Keywords:

DX Centers, DX⁰ State, Effective Correlation Energy, Heavily Doped GaAs

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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