Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

1161-1166

DOI:

10.4028/www.scientific.net/MSF.143-147.1161

Citation:

B. Goutiers et al., "Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?", Materials Science Forum, Vols. 143-147, pp. 1161-1166, 1994

Online since:

October 1993

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$35.00

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