Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si
p.1117
p.1117
Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAs
p.1123
p.1123
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
p.1129
p.1129
The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
p.1135
p.1135
Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
p.1141
p.1141
On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si
p.1149
p.1149
Defect Interaction with the Double Donor 77Br in GaAs and InAs
p.1155
p.1155
Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?
p.1161
p.1161
The Metastable Si:(S + Cu) Defect
p.1167
p.1167
Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
1141-1148
Citation:
Online since:
October 1993
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Сopyright:
© 1994 Trans Tech Publications Ltd. All Rights Reserved
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