Paper Titles

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Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
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Hole Capture by the DX Center in AlGaAs Schottky Barriers
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Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si
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Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs
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Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al_0.35Ga_0.65As
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The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
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Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
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On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Evidence for Alloy Splitting of the Te DX State in...

Evidence for Alloy Splitting of the Te DX State in Al_xGa_1-xAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1123-1128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1123

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Online since:

October 1993

Authors:

G. Ostermayer, W. Jantsch, Z.R. Żytkiewicz, Zbysław Wilamowski

Keywords:

Alloy Splitting, DX Center

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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