Paper Titles

Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure
p.1035

Magneto-Optical and ODEPR Investigations of Silicon Doped Al_xGa_1-xAs
p.1041

First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
p.1047

Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
p.1051

The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
p.1057

Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
p.1063

Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
p.1069

Pressure Induced *-Shallow - Deep A₁ Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs
p.1075

Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
p.1081

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Ultrasonics-Induced-Quenching of PPC Related...

The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1057-1062

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1057

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Online since:

October 1993

Authors:

A.E. Belyaev, Hans Jürgen von Bardeleben, M.L. Fille, E. Oborina, Yu.S. Ryabchenko, A.U. Savchuk, Moissei K. Sheinkman

Keywords:

DX Center, Photoconductivity, Ultrasonic

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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