Paper Titles

Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
p.1019

Photoexcited and Metastable States of DX Centers in Si Doped Al_x Ga_1-x As
p.1025

Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
p.1031

Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure
p.1035

Magneto-Optical and ODEPR Investigations of Silicon Doped Al_xGa_1-xAs
p.1041

First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
p.1047

Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
p.1051

The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
p.1057

Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
p.1063

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Magneto-Optical and ODEPR Investigations of...

Magneto-Optical and ODEPR Investigations of Silicon Doped Al_xGa_1-xAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1041-1046

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1041

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Online since:

October 1993

Authors:

Matthias Linde, Tomasz Pawlik, Harald Overhof, Johann Martin Spaeth

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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