Paper Titles

Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
p.1013

Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
p.1019

Photoexcited and Metastable States of DX Centers in Si Doped Al_x Ga_1-x As
p.1025

Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
p.1031

Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure
p.1035

Magneto-Optical and ODEPR Investigations of Silicon Doped Al_xGa_1-xAs
p.1041

First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
p.1047

Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
p.1051

The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
p.1057

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Ab-Initio Calculation of the Hyperfine Fields for...

Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1035-1040

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1035

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Online since:

October 1993

Authors:

Harald Overhof

Keywords:

DX Donors, GaAs, Hyperfine Interaction, Lattice Relaxation, LSDA Theory

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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