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The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
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A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
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Hydrostatic Pressure Investigations of Metastable Defect States
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Hydrostatic Pressure Investigations of Metastable...

Hydrostatic Pressure Investigations of Metastable Defect States

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

975-982

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.975

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Online since:

October 1993

Authors:

T. Suski

Keywords:

2D Electron Gas Mobility, Impurity Charges, Metastable Donors, Spatial Correlation

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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