Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

951-956

DOI:

10.4028/www.scientific.net/MSF.143-147.951

Citation:

B. Machayekhi et al., "Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling ", Materials Science Forum, Vols. 143-147, pp. 951-956, 1994

Online since:

October 1993

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$35.00

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