Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
p.927
p.927
Depth Distribution of Diffused Hydrogen in n-Type GaAs
p.933
p.933
Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon
p.939
p.939
Deuterium Effusion from InP
p.945
p.945
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
p.951
p.951
Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon
p.957
p.957
The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
p.963
p.963
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
p.969
p.969
Hydrostatic Pressure Investigations of Metastable Defect States
p.975
p.975
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
951-956
Citation:
Online since:
October 1993
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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