Paper Titles

Photo-Induced Lattice Relaxation and Dissociation of a Hydrogen-Carbon Complex in Silicon
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Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
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Depth Distribution of Diffused Hydrogen in n-Type GaAs
p.933

Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon
p.939

Deuterium Effusion from InP
p.945

Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
p.951

Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon
p.957

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
p.963

A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Deuterium Effusion from InP

Deuterium Effusion from InP

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

945-950

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.945

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Online since:

October 1993

Authors:

B. Theys, Jacques Chevallier

Keywords:

Effusion, Hydrogen, InP

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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