Defects in Semiconductors 17

Defects in Semiconductors 17

Description:

This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

Keywords:
PART 1. General Aspects of Defects in Semiconductors. 1. Material Related Defects. 1.1 Large Band-Gap Materials. 1.2 Elemental Semiconductors. 1.3 III-V Compounds. 1.4 II-VI Compounds. 1.5 Alloys (including Si-Ge). 2. Defects in Low-Dimensional Structures. 2.1 Surfaces, Interfaces and Misfit Dislocations. 2.2 Defects in Superlattices and Strained Layers. 2.3 delta-Doping. PART 2. 3. Special Defects. 3.1 Shallow Defects. 3.2 Rare Earth Impurities. 3.3 Metal Impurities. 3.4 Hydrogen. 3.5 Oxygen. 3.6 Metastable Defects. 3.7 Pairs and Complexes, Defect Reactions.

Info:

ISBN-13:
978-0-87849-671-6
Editors:
Helmut Heinrich and Wolfgang Jantsch
Pages:
1722
Year:
1994
Edition:
3-vol. set

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