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Paper Titles
Hydrogen Diffusion in Compound Semiconductors
p.219
Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors
p.251
Hydrogen in Crystalline Gallium Phosphide
p.281
Hydrogen in Ternary and Quaternary Materials
p.295
Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors
p.321
Theoretical and μSR Studies Related to Hydrogen in Compound Semiconductors
p.349
Hydrogen in III-V Compound Semiconductors
p.393
Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques
p.481
Hydrogen in III-V Device Structures
p.501

Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors

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Periodical:

Materials Science Forum (Volumes 148-149)

Pages:

321-348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.148-149.321

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Online since:

December 1993

Authors:

B. Pajot

Keywords:

Dopant Passivation, Dopant-Hydrogen Complexes, Proton Implantation, Semiconducting Compounds

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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